Microprocess Technology to Fabricate RF MEMS Switches, Variable Capacitors and Mechanical Resonators above Advanced LSI
نویسندگان
چکیده
This paper introduces our recent activities in R&D Center of Excellence for Integrated Microsystems toward new integrated MEMS. The most prominent difference of the new integrated MEMS from conventional ones is that MEMS is fabricated on advanced LSI with a very small design rule. Two examples of integrated MEMS technologies under development are described. The first one is singlecrystal-silicon-on-LSI (SOL) technology. A thin single crystal Si layer is bonded on a (dummy) LSI wafer with polymer, and then electrostatically-actuated RF MEMS switches were fabricated on it. The second one is AlN MEMS technology using a Ge sacrificial layer. AlN Lamb wave resonators with resonant frequencies from 300 MHz to 1.1 GHz were fabricated and evaluated.
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